STD12N60M2
STMicroelectronics
STMicroelectronics
MOSFET N-CHANNEL 600V 9A DPAK
$0.89
Available to order
Reference Price (USD)
2,500+
$0.74690
5,000+
$0.70956
12,500+
$0.68288
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the STD12N60M2 single MOSFET from STMicroelectronics. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the STD12N60M2 combines cutting-edge technology with STMicroelectronics's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
FDMC86102
Microchip Technology
APT10021JLL
Central Semiconductor Corp
CWDM305P TR13 PBFREE
Sanyo
5HN01M-TL-E-SA
IXYS
IXTQ75N10P
onsemi
NTMJS1D3N04CTWG
Infineon Technologies
IPB80P03P405ATMA1
Sanken
SKI04033
Nexperia USA Inc.
PSMN013-100BS,118
Toshiba Semiconductor and Storage