STD16N65M5
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 12A DPAK
$3.17
Available to order
Reference Price (USD)
2,500+
$2.51752
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the STD16N65M5 by STMicroelectronics, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the STD16N65M5 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SIR460DP-T1-GE3
Fairchild Semiconductor
FQP17N08
Vishay Siliconix
SQD25N06-22L_T4GE3
Diodes Incorporated
DMT6016LSS-13
Infineon Technologies
BSZ075N08NS5ATMA1
Vishay Siliconix
SQJ418EP-T1_GE3
Fairchild Semiconductor
FQN1N60CTA
Infineon Technologies
BUZ100S
Alpha & Omega Semiconductor Inc.
AOW12N65
Panjit International Inc.