STGFW30H65FB
STMicroelectronics
STMicroelectronics
IGBT 650V 60A 58W TO3PF
$0.00
Available to order
Reference Price (USD)
1+
$3.42000
30+
$2.90600
120+
$2.51842
510+
$2.14388
1,020+
$1.80810
2,520+
$1.72200
Exquisite packaging
Discount
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The STGFW30H65FB Single IGBT transistor by STMicroelectronics is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The STGFW30H65FB ensures precise power control and long-term stability. With STMicroelectronics's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate STGFW30H65FB into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 58 W
- Switching Energy: 151µJ (on), 293µJ (off)
- Input Type: Standard
- Gate Charge: 149 nC
- Td (on/off) @ 25°C: 37ns/146ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PF-3
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