STGW40H65FB
STMicroelectronics
STMicroelectronics
IGBT 650V 80A 283W TO247
$4.07
Available to order
Reference Price (USD)
1+
$6.36000
30+
$5.46233
120+
$4.78825
510+
$4.13663
1,020+
$3.55240
2,520+
$3.40260
Exquisite packaging
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Upgrade your power management systems with the STGW40H65FB Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the STGW40H65FB provides reliable and efficient operation. STMicroelectronics's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose STGW40H65FB for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
- Power - Max: 283 W
- Switching Energy: 498mJ (on), 363mJ (off)
- Input Type: Standard
- Gate Charge: 210 nC
- Td (on/off) @ 25°C: 40ns/142ns
- Test Condition: 400V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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