STGW80H65FB-4
STMicroelectronics
STMicroelectronics
IGBT BIPO 650V 80A TO247
$0.00
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Reference Price (USD)
600+
$9.41875
Exquisite packaging
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The STGW80H65FB-4 by STMicroelectronics is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the STGW80H65FB-4 delivers robust performance. STMicroelectronics's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate STGW80H65FB-4 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
- Power - Max: 469 W
- Switching Energy: 2.1mJ (on), 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 414 nC
- Td (on/off) @ 25°C: 84ns/280ns
- Test Condition: 400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4
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