STGWA25S120DF3
STMicroelectronics
STMicroelectronics
IGBT 1200V 25A TO247-3L
$0.00
Available to order
Reference Price (USD)
1+
$10.00000
30+
$8.61000
120+
$7.47600
510+
$6.51000
1,020+
$5.67000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the STGWA25S120DF3 Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the STGWA25S120DF3 ensures precision and reliability. STMicroelectronics's cutting-edge technology guarantees a component that meets the highest industry standards. Choose STGWA25S120DF3 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Power - Max: 375 W
- Switching Energy: 830µJ (on), 2.37mJ (off)
- Input Type: Standard
- Gate Charge: 80 nC
- Td (on/off) @ 25°C: 31ns/147ns
- Test Condition: 600V, 25A, 15Ohm, 15V
- Reverse Recovery Time (trr): 265 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
IXYS
IXGQ200N30PB
IXYS
IXGH36N60B3D1
Microchip Technology
APT25GP90BDQ1G
Infineon Technologies
IGW20N60H3
Infineon Technologies
IRG4PC40KDPBF
Infineon Technologies
SKB06N60HSATMA1
Infineon Technologies
IRG4BC40W-STRRP
Infineon Technologies
IRG7PSH73K10PBF
Infineon Technologies
IRGS4620DTRLPBF
Fairchild Semiconductor