STGWA60H65DFB
STMicroelectronics
STMicroelectronics
IGBT BIPO 650V 60A TO247-3
$0.00
Available to order
Reference Price (USD)
1+
$5.95000
30+
$5.10500
120+
$4.47500
510+
$3.86600
1,020+
$3.32000
2,520+
$3.18000
Exquisite packaging
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The STGWA60H65DFB Single IGBT transistor by STMicroelectronics is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the STGWA60H65DFB provides consistent performance in varied conditions. Rely on STMicroelectronics's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
- Power - Max: 375 W
- Switching Energy: 1.59mJ (on), 900µJ (off)
- Input Type: Standard
- Gate Charge: 306 nC
- Td (on/off) @ 25°C: 66ns/210ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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