STH130N10F3-2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 100V 120A H2PAK-2
$0.00
Available to order
Reference Price (USD)
1,000+
$2.06360
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the STH130N10F3-2 from STMicroelectronics, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the STH130N10F3-2 ensures reliable performance in demanding environments. Upgrade your circuit designs with STMicroelectronics's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.3mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3305 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2Pak-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IRFU3710Z
Renesas Electronics America Inc
RJK2009DPM-00#T0
Vishay Siliconix
IRF720STRR
onsemi
NTMFS5C456NLT3G
Infineon Technologies
IRFB4310GPBF
Infineon Technologies
IRFR4105TR
Infineon Technologies
IPP60R380C6
Renesas Electronics America Inc
RJK5012DPE-00#J3
Rohm Semiconductor
R5207ANDTL
Alpha & Omega Semiconductor Inc.