STH170N8F7-2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 80V 120A H2PAK-2
$2.25
Available to order
Reference Price (USD)
1,000+
$1.63672
2,000+
$1.53692
5,000+
$1.48702
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STH170N8F7-2 from STMicroelectronics sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to STMicroelectronics's STH170N8F7-2 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8710 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2Pak-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Renesas Electronics America Inc
UPA2762UGR-E1-AT
Renesas Electronics America Inc
UPA2719GR-E1-A
Infineon Technologies
IRF8788TRPBF
STMicroelectronics
STL50NH3LL
Vishay Siliconix
SIA432DJ-T1-GE3
STMicroelectronics
STW45N65M5
Infineon Technologies
BSC160N10NS3GATMA1
Infineon Technologies
IPI65R420CFD
Diodes Incorporated
DMN62D0UW-13
onsemi