STHU32N65DM6AG
STMicroelectronics
STMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 650 V
$8.88
Available to order
Reference Price (USD)
1+
$8.88000
500+
$8.7912
1000+
$8.7024
1500+
$8.6136
2000+
$8.5248
2500+
$8.436
Exquisite packaging
Discount
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Upgrade your designs with the STHU32N65DM6AG by STMicroelectronics, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the STHU32N65DM6AG is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 97mOhm @ 18.5A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52.6 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2211 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 320W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: HU3PAK
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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