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STI35N65M5

STMicroelectronics
STI35N65M5 Preview
STMicroelectronics
MOSFET N-CH 650V 27A I2PAK
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 98mOhm @ 13.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

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