STI45N10F7
STMicroelectronics
STMicroelectronics
MOSFET N-CH 100V 45A I2PAK
$2.50
Available to order
Reference Price (USD)
1+
$2.78000
50+
$2.26400
100+
$2.05210
500+
$1.62856
1,000+
$1.37445
2,500+
$1.28975
5,000+
$1.24740
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the STI45N10F7 single MOSFET from STMicroelectronics. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the STI45N10F7 combines cutting-edge technology with STMicroelectronics's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK (TO-262)
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Vishay Siliconix
SQD50P06-15L_T4GE3
Vishay Siliconix
SIR870ADP-T1-GE3
onsemi
FDB86135
Toshiba Semiconductor and Storage
SSM6K517NU,LF
Vishay Siliconix
SUD25N15-52-BE3
Vishay Siliconix
SQJ479EP-T1_GE3
Nexperia USA Inc.
BSN20BKR
Infineon Technologies
IPL65R650C6SATMA1
Infineon Technologies
IPP100N08S207AKSA1
Microchip Technology