STP10N60M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 7.5A TO220
$1.66
Available to order
Reference Price (USD)
1+
$1.96000
50+
$1.58600
100+
$1.39930
500+
$1.10582
1,000+
$0.89240
2,500+
$0.83905
5,000+
$0.80171
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STP10N60M2 from STMicroelectronics redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the STP10N60M2 offers the precision and reliability you need. Trust STMicroelectronics to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SIA106DJ-T1-GE3
IXYS
IXFK100N65X2
NXP USA Inc.
PSMN8R0-30YL,115
Infineon Technologies
IPB65R190C7ATMA2
Infineon Technologies
IPD06N03LAG
onsemi
MTSF3N03HDR2
Diodes Incorporated
DMN2004K-7
Vishay Siliconix
SIHP38N60E-GE3
Panjit International Inc.
PJA3416-AU_R1_000A1
Panjit International Inc.