STP11NM60
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 11A TO220AB
$4.44
Available to order
Reference Price (USD)
1,000+
$1.94040
Exquisite packaging
Discount
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The STP11NM60 from STMicroelectronics redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the STP11NM60 offers the precision and reliability you need. Trust STMicroelectronics to power your next breakthrough innovation.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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