STP165N10F4
STMicroelectronics
STMicroelectronics
MOSFET N-CH 100V 120A TO220AB
$0.00
Available to order
Reference Price (USD)
1+
$4.07000
50+
$3.27240
100+
$2.98160
500+
$2.41434
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the STP165N10F4 by STMicroelectronics, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The STP165N10F4 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose STMicroelectronics.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 315W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
onsemi
NVMFS6B05NWFT1G
Vishay Siliconix
IRLR110TRR
IXYS
IXTQ152N085T
Infineon Technologies
IRF7452TR
Toshiba Semiconductor and Storage
2SK4016(Q)
Diodes Incorporated
ZVN4306ASTZ
IXYS
IXTH56N15T
STMicroelectronics
STB14NK50Z-1
onsemi
2N7000G
Vishay Siliconix