STP26N65DM2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 20A TO220
$2.44
Available to order
Reference Price (USD)
1+
$2.44370
500+
$2.419263
1000+
$2.394826
1500+
$2.370389
2000+
$2.345952
2500+
$2.321515
Exquisite packaging
Discount
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The STP26N65DM2 from STMicroelectronics sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to STMicroelectronics's STP26N65DM2 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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