STU8NM60ND
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 7A IPAK
$0.00
Available to order
Reference Price (USD)
3,000+
$1.92092
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the STU8NM60ND single MOSFET from STMicroelectronics. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the STU8NM60ND combines cutting-edge technology with STMicroelectronics's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 700mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
onsemi
FDS4141SN00136P
IXYS
IXFX15N100
Infineon Technologies
IPAW60R600CEXKSA1
Alpha & Omega Semiconductor Inc.
AO4438_101
Infineon Technologies
IRFSL3307
Infineon Technologies
IRF6616
Infineon Technologies
BSP372 E6327
Infineon Technologies
64-9145
onsemi
NTDV5804NT4G
Infineon Technologies