STW11NB80
STMicroelectronics
STMicroelectronics
MOSFET N-CH 800V 11A TO247-3
$0.00
Available to order
Reference Price (USD)
600+
$4.01720
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the STW11NB80 by STMicroelectronics, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the STW11NB80 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 800mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Infineon Technologies
IRLR7843CPBF
IXYS
IXFJ40N30
onsemi
MTP36N06V
Infineon Technologies
IRFH5220TR2PBF
Panasonic Electronic Components
2SK1374G0L
Infineon Technologies
IRFL4105TR
Infineon Technologies
SPD07N60C3
Infineon Technologies
IPP80P04P405AKSA1
Alpha & Omega Semiconductor Inc.
AOU1N60
Infineon Technologies