STW24N60M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 18A TO247
$0.00
Available to order
Reference Price (USD)
1+
$5.96000
30+
$4.85033
120+
$4.44992
510+
$3.66912
1,020+
$3.14861
2,520+
$3.00846
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the STW24N60M2 single MOSFET from STMicroelectronics. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the STW24N60M2 combines cutting-edge technology with STMicroelectronics's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Toshiba Semiconductor and Storage
2SJ380(F)
IXYS
IXTP6N50P
Micro Commercial Co
MCP04N80-BP
Vishay Siliconix
SI4466DY-T1-E3
Infineon Technologies
IPP065N06LGAKSA1
onsemi
NTR1P02T3
NXP USA Inc.
BUK951R8-40EQ
Toshiba Semiconductor and Storage
2SK2962,F(J
Fairchild Semiconductor
FQPF8P10
Vishay Siliconix