STW80NE06-10
STMicroelectronics
STMicroelectronics
MOSFET N-CH 60V 80A TO247-3
$0.00
Available to order
Reference Price (USD)
600+
$2.00860
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STW80NE06-10 from STMicroelectronics redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the STW80NE06-10 offers the precision and reliability you need. Trust STMicroelectronics to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Renesas Electronics America Inc
RJL5012DPP-M0#T2
Taiwan Semiconductor Corporation
TSM10N60CZ C0G
Infineon Technologies
AUIRF2907ZS7PTL
Diodes Incorporated
ZVNL120CSTZ
Renesas Electronics America Inc
HAT2279H-EL-E
Fairchild Semiconductor
FQD6N40TM
Infineon Technologies
AUIRFR5410
Infineon Technologies
IRFI2807
Rohm Semiconductor
RCD100N20TL
Alpha & Omega Semiconductor Inc.