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STWA65N65DM2AG

STMicroelectronics
STWA65N65DM2AG Preview
STMicroelectronics
MOSFET N-CH 650V 60A TO247
$11.80
Available to order
Reference Price (USD)
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$11.80000
500+
$11.682
1000+
$11.564
1500+
$11.446
2000+
$11.328
2500+
$11.21
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 446W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3

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