Shopping cart

Subtotal: $0.00

SUD09P10-195-BE3

Vishay Siliconix
SUD09P10-195-BE3 Preview
Vishay Siliconix
MOSFET P-CH 100V 8.8A DPAK
$0.91
Available to order
Reference Price (USD)
1+
$0.91000
500+
$0.9009
1000+
$0.8918
1500+
$0.8827
2000+
$0.8736
2500+
$0.8645
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 195mOhm @ 3.6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 32.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products

Infineon Technologies

IPA075N15N3GXKSA1

Infineon Technologies

BSC100N06LS3GATMA1

Toshiba Semiconductor and Storage

TK10A60W5,S5VX

Fairchild Semiconductor

HUF76137P3

Microchip Technology

TN5325N8-G

Vishay Siliconix

SIR166DP-T1-GE3

Panjit International Inc.

PJQ4408P-AU_R2_000A1

Vishay Siliconix

SI8413DB-T1-E1

Top