SUD50N02-09P-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V TO252
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SUD50N02-09P-E3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SUD50N02-09P-E3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 6.5W (Ta), 39.5W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IRFR2407TRL
Infineon Technologies
IRFS4115-7PPBF
Diodes Incorporated
DMN3005LK3-13
Vishay Siliconix
IRFBC40LCL
Vishay Siliconix
SI8405DB-T1-E3
onsemi
NTD14N03R-001
STMicroelectronics
STD6NM60N-1
Nexperia USA Inc.
BUK98180-100A/CU115
Vishay Siliconix
SI7668ADP-T1-GE3
Vishay Siliconix