SUD50N04-8M8P-4BE3
Vishay Siliconix
        
                
                                Vishay Siliconix                            
                        
                                MOSFET N-CH 40V 14A/50A DPAK                            
                        $1.35
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $1.35000
                                        500+
                                            $1.3365
                                        1000+
                                            $1.323
                                        1500+
                                            $1.3095
                                        2000+
                                            $1.296
                                        2500+
                                            $1.2825
                                        Exquisite packaging
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                    The SUD50N04-8M8P-4BE3 by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.                
            Specifications
- Product Status: Active
 - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 40 V
 - Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc)
 - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 - Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
 - Vgs(th) (Max) @ Id: 3V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
 - Vgs (Max): ±20V
 - Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
 - FET Feature: -
 - Power Dissipation (Max): 3.1W (Ta), 48.1W (Tc)
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-252AA
 - Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
 
