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SUM110P08-11-E3

Vishay Siliconix
SUM110P08-11-E3 Preview
Vishay Siliconix
MOSFET P-CH 80V 110A TO263
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Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 40 V
  • FET Feature: -
  • Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D²Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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