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SUM33N20-60P-E3

Vishay Siliconix
SUM33N20-60P-E3 Preview
Vishay Siliconix
MOSFET N-CH 200V 33A TO263
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 15 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 2735 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 3.12W (Ta), 156W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D²Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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