Shopping cart

Subtotal: $0.00

SUM70060E-GE3

Vishay Siliconix
SUM70060E-GE3 Preview
Vishay Siliconix
MOSFET N-CH 100V 131A TO263
$2.18
Available to order
Reference Price (USD)
800+
$1.16620
1,600+
$1.07024
2,400+
$0.99643
5,600+
$0.95953
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D²Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

Infineon Technologies

AUIRFS3107-7P

Taiwan Semiconductor Corporation

TSM045NB06CR RLG

Toshiba Semiconductor and Storage

TK100A06N1,S4X

Vishay Siliconix

SI7116DN-T1-GE3

Infineon Technologies

BSC028N06NSATMA1

Vishay Siliconix

SIHP14N60E-BE3

Alpha & Omega Semiconductor Inc.

AONS66920

Top