Shopping cart

Subtotal: $0.00

SUP36N20-54P-E3

Vishay Siliconix
SUP36N20-54P-E3 Preview
Vishay Siliconix
MOSFET N-CH 200V 36A TO220AB
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 15V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 15 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 3.12W (Ta), 166W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3

Related Products

Infineon Technologies

IPP075N15N3GHKSA1

Vishay Siliconix

SIE860DF-T1-E3

Alpha & Omega Semiconductor Inc.

AOT12N60FDL

Infineon Technologies

IRF6722MTRPBF

Infineon Technologies

BSC090N03MSG

Diodes Incorporated

DMG4N60SCT

Microsemi Corporation

APT7F80K

Vishay Siliconix

SUP40N10-30-E3

NXP USA Inc.

PHD3055E,118

Alpha & Omega Semiconductor Inc.

AOK8N80L

Top