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T2N7002BK,LM

Toshiba Semiconductor and Storage
T2N7002BK,LM Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 400MA SOT23-3
$0.17
Available to order
Reference Price (USD)
3,000+
$0.02805
6,000+
$0.02530
15,000+
$0.02200
30,000+
$0.01980
75,000+
$0.01760
150,000+
$0.01540
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 320mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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