TA9210D
Tagore Technology
Tagore Technology
PA RF GAN PWR 12.5W .03-4GHZ 32V
$47.98
Available to order
Reference Price (USD)
1+
$47.98000
500+
$47.5002
1000+
$47.0204
1500+
$46.5406
2000+
$46.0608
2500+
$45.581
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the TA9210D RF MOSFET from Tagore Technology is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The TA9210D's robust construction ensures long-term reliability even in harsh environments. Choose Tagore Technology's TA9210D for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Active
- Transistor Type: GaN HEMT
- Frequency: 30MHz ~ 4GHz
- Gain: 18dB
- Voltage - Test: 32 V
- Current Rating (Amps): 700mA
- Noise Figure: -
- Current - Test: 50 mA
- Power - Output: 12.5W
- Voltage - Rated: 120 V
- Package / Case: -
- Supplier Device Package: -
Related Products
Fairchild Semiconductor
FDMC0223
Ampleon USA Inc.
BLF989EU
onsemi
MMBFJ310LT3G
STMicroelectronics
RF2L36075CF2
Ampleon USA Inc.
BLF642,112
Sanyo
2SK3720-5-TB-E
Ampleon USA Inc.
BLC9G20XS-550AVTZ
Microchip Technology
VRF141
onsemi
CPH3405-TL-E
Ampleon USA Inc.