TA9310E
Tagore Technology
Tagore Technology
PA RF GAN PWR 20W .03-4GHZ 32V
$49.99
Available to order
Reference Price (USD)
1+
$49.99000
500+
$49.4901
1000+
$48.9902
1500+
$48.4903
2000+
$47.9904
2500+
$47.4905
Exquisite packaging
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Designed for superior RF performance, the TA9310E from Tagore Technology is a premium MOSFET transistor in the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - RF). This component excels in high-frequency applications with its low gate resistance, high cut-off frequency, and excellent power handling capability. It's widely used in applications ranging from broadcast television to military communication systems and medical diathermy equipment. The TA9310E combines Tagore Technology's advanced semiconductor technology with rigorous quality standards to deliver a transistor that outperforms in terms of efficiency, reliability, and signal fidelity. Choose the TA9310E for your RF designs that demand nothing but the best in high-frequency performance.
Specifications
- Product Status: Active
- Transistor Type: GaN HEMT
- Frequency: 30MHz ~ 4GHz
- Gain: 17.5dB
- Voltage - Test: 32 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 20W
- Voltage - Rated: 120 V
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-QFN (5x6)
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