TA9410E
Tagore Technology
Tagore Technology
PA RF GAN PWR 25W .03-4GHZ 50V
$70.00
Available to order
Reference Price (USD)
1+
$70.00000
500+
$69.3
1000+
$68.6
1500+
$67.9
2000+
$67.2
2500+
$66.5
Exquisite packaging
Discount
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The TA9410E is a high-efficiency RF MOSFET transistor by Tagore Technology, part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The TA9410E's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With Tagore Technology's reputation for quality, you can trust the TA9410E to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Active
- Transistor Type: GaN HEMT
- Frequency: 20MHz ~ 3GHz
- Gain: 17dB
- Voltage - Test: -
- Current Rating (Amps): 30A
- Noise Figure: -
- Current - Test: -
- Power - Output: 25W
- Voltage - Rated: 50 V
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-QFN (5x6)
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