TAN250A
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 60V 1.215GHZ 55AW
$0.00
Available to order
Reference Price (USD)
25+
$314.97520
Exquisite packaging
Discount
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Upgrade your RF circuits with the TAN250A, a high-efficiency Bipolar Junction Transistor (BJT) from Microsemi Corporation. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The TAN250A offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose Microsemi Corporation for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 60V
- Frequency - Transition: 960MHz ~ 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 6.2db ~ 7dB
- Power - Max: 575W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
- Current - Collector (Ic) (Max): 30A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55AW
- Supplier Device Package: 55AW
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