TAN350
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 65V 1.215GHZ 55ST
$0.00
Available to order
Reference Price (USD)
25+
$480.87840
Exquisite packaging
Discount
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Upgrade your RF circuits with the TAN350, a high-efficiency Bipolar Junction Transistor (BJT) from Microsemi Corporation. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The TAN350 offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose Microsemi Corporation for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 960MHz ~ 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7dB ~ 7.5dB
- Power - Max: 1450W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
- Current - Collector (Ic) (Max): 40A
- Operating Temperature: 230°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55ST
- Supplier Device Package: 55ST
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