TBAT54S,LM
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 200MA SOT23
$0.23
Available to order
Reference Price (USD)
3,000+
$0.03570
6,000+
$0.03220
15,000+
$0.02800
30,000+
$0.02520
75,000+
$0.02240
150,000+
$0.01960
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TBAT54S,LM from Toshiba Semiconductor and Storage sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. Toshiba Semiconductor and Storage's rigorous quality control ensures the TBAT54S,LM maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io) (per Diode): 200mA
- Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1.5 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 25 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Related Products
Taiwan Semiconductor Corporation
TSD10H100CW
Vishay General Semiconductor - Diodes Division
MBRB30H60CTHE3_B/I
STMicroelectronics
STPS16045TV
Rohm Semiconductor
BAT54SHMT116
Panjit International Inc.
ER1601FCT_T0_00001
Panjit International Inc.
BD1060CS_L2_00001
Panjit International Inc.
BAV70DW_R1_00001
Rohm Semiconductor
BAV199UMFHTL
Taiwan Semiconductor Corporation
MBR10H150CT
SMC Diode Solutions