TH58NYG3S0HBAI6
Kioxia America, Inc.

Kioxia America, Inc.
IC FLASH 8GBIT PARALLEL 67VFBGA
$0.00
Available to order
Reference Price (USD)
1+
$8.40000
10+
$7.73400
25+
$7.57280
50+
$7.54600
100+
$6.76960
338+
$6.56435
676+
$6.24303
1,014+
$6.02438
Exquisite packaging
Discount
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Optimize your electronic designs with the TH58NYG3S0HBAI6 Memory IC from Kioxia America, Inc., a leading component in the Memory category. This IC offers unparalleled data storage and access speeds, making it a must-have for high-performance systems. Its innovative architecture ensures efficiency and reliability in diverse operating conditions.
The TH58NYG3S0HBAI6 embodies the essential features of Memory ICs: high capacity, fast operation, and low power consumption. These ICs are pivotal in devices that require rapid data processing, such as digital cameras and communication modules. The TH58NYG3S0HBAI6 excels in these areas, providing consistent and dependable performance.
This Memory IC is extensively used in fields like robotics, industrial control systems, and consumer gadgets. For example, it is a key component in robotic arms that require precise and quick data handling. It also enhances the functionality of smart appliances by enabling efficient memory operations. The TH58NYG3S0HBAI6 is a top-tier choice for Memory ICs in various industries.
Specifications
- Product Status: Active
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 8Gb (1G x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 67-VFBGA
- Supplier Device Package: 67-VFBGA (6.5x8)