TIP112TU
onsemi
onsemi
TRANS NPN DARL 100V 2A TO220-3
$0.00
Available to order
Reference Price (USD)
1+
$0.76000
10+
$0.66700
100+
$0.51500
500+
$0.41064
1,000+
$0.33188
Exquisite packaging
Discount
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The TIP112TU Bipolar Junction Transistor (BJT) by onsemi is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the TIP112TU provides consistent performance in demanding applications. Choose onsemi for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
- Current - Collector Cutoff (Max): 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
- Power - Max: 2 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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