TIP151
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 350V 10A TO220
$3.09
Available to order
Reference Price (USD)
1+
$3.09000
500+
$3.0591
1000+
$3.0282
1500+
$2.9973
2000+
$2.9664
2500+
$2.9355
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TIP151 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the TIP151 is a reliable component for demanding applications. NTE Electronics, Inc's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 250mA, 5A
- Current - Collector Cutoff (Max): 250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2.5A, 5V
- Power - Max: 80 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
Related Products
Nexperia USA Inc.
BC52-10PA,115
Infineon Technologies
BCX55E6327
Nexperia USA Inc.
PDTA123YM,315
Microchip Technology
JANTX2N4150S
onsemi
2SC2274F
Diodes Incorporated
DN350T05-7
Microchip Technology
JAN2N2222A
Diodes Incorporated
FZT705QTA
NTE Electronics, Inc
NTE389
Rohm Semiconductor