TIPL760B-S
Bourns Inc.
Bourns Inc.
TRANS NPN 1100V 4A TO220
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Experience unmatched performance with the TIPL760B-S Bipolar Junction Transistor (BJT) by Bourns Inc.. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the TIPL760B-S delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Bourns Inc. for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 1100 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
- Power - Max: 75 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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