Shopping cart

Subtotal: $0.00

TK10S04K3L(T6L1,NQ

Toshiba Semiconductor and Storage
TK10S04K3L(T6L1,NQ Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 10A DPAK
$0.00
Available to order
Reference Price (USD)
2,000+
$0.46200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products

Vishay Siliconix

IRF540S

Diodes Incorporated

ZXMN2A01FTC

Infineon Technologies

IRF7828TRPBF

Infineon Technologies

IPI65R280E6XKSA1

Infineon Technologies

IRF8736PBF

Top