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TK14C65W,S1Q

Toshiba Semiconductor and Storage
TK14C65W,S1Q Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 13.7A I2PAK
$0.00
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Reference Price (USD)
50+
$2.43760
Exquisite packaging
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 690µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

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