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TK1P90A,LQ(CO

Toshiba Semiconductor and Storage
TK1P90A,LQ(CO Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 900V 1A PW-MOLD
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: PW-MOLD
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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