TK20G60W,RVQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N CH 600V 20A D2PAK
$1.35
Available to order
Reference Price (USD)
1,000+
$1.22670
Exquisite packaging
Discount
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Enhance your electronic projects with the TK20G60W,RVQ single MOSFET from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Toshiba Semiconductor and Storage's TK20G60W,RVQ for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
- FET Feature: Super Junction
- Power Dissipation (Max): 165W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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