TK20J60W,S1VE
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
$5.10
Available to order
Reference Price (USD)
1+
$5.10000
500+
$5.049
1000+
$4.998
1500+
$4.947
2000+
$4.896
2500+
$4.845
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TK20J60W,S1VE by Toshiba Semiconductor and Storage is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Toshiba Semiconductor and Storage for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 165W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)
- Package / Case: TO-3P-3, SC-65-3
Related Products
Diodes Incorporated
DMN1014UFDF-7
Vishay Siliconix
SI7810DN-T1-E3
onsemi
NTD50N03RT4G
STMicroelectronics
STW45N60DM2AG
Diodes Incorporated
DMP6350SQ-7
Panjit International Inc.
PJQ5466A1_R2_00001
Fairchild Semiconductor
HUFA76429D3S
Rectron USA
RM60N30DF
Renesas Electronics America Inc
2SK3055-AZ
Infineon Technologies