TK380A65Y,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
$1.91
Available to order
Reference Price (USD)
1+
$1.91000
500+
$1.8909
1000+
$1.8718
1500+
$1.8527
2000+
$1.8336
2500+
$1.8145
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the TK380A65Y,S4X by Toshiba Semiconductor and Storage, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the TK380A65Y,S4X is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 360µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
Fairchild Semiconductor
FDC655AN
Vishay Siliconix
IRF620STRRPBF
NTE Electronics, Inc
NTE2385
Vishay Siliconix
SQJA94EP-T1_GE3
Vishay Siliconix
SIHB065N60E-GE3
Vishay Siliconix
SIHW47N60EF-GE3
NXP Semiconductors
BUK6E2R3-40C,127
Diodes Incorporated
DMP2021UFDF-7
Microchip Technology
APT6029BFLLG
Vishay Siliconix