TK3A60DA(STA4,Q,M)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 2.5A TO220SIS
$1.08
Available to order
Reference Price (USD)
50+
$0.97720
Exquisite packaging
Discount
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The TK3A60DA(STA4,Q,M) single MOSFET from Toshiba Semiconductor and Storage is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the TK3A60DA(STA4,Q,M) is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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