TK560A60Y,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 7A TO220SIS
$1.36
Available to order
Reference Price (USD)
1+
$1.23000
50+
$0.98000
100+
$0.85750
500+
$0.66500
1,000+
$0.52500
2,500+
$0.49000
Exquisite packaging
Discount
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Optimize your power electronics with the TK560A60Y,S4X single MOSFET from Toshiba Semiconductor and Storage. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the TK560A60Y,S4X combines cutting-edge technology with Toshiba Semiconductor and Storage's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 30W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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