TK58A06N1,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 58A TO220SIS
$1.39
Available to order
Reference Price (USD)
1+
$1.34000
50+
$1.07520
100+
$0.94080
500+
$0.72960
1,000+
$0.57600
2,500+
$0.53760
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TK58A06N1,S4X by Toshiba Semiconductor and Storage is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the TK58A06N1,S4X is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.4mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id: 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
NTE Electronics, Inc
NTE2935
onsemi
NTMFS4835NT1G
IXYS
IXTY01N100
Fairchild Semiconductor
SSR1N60BTF
onsemi
NTBGS001N06C
Infineon Technologies
IRFZ46NPBF
Diodes Incorporated
DMP1045UFY4-7
NXP USA Inc.
BUK7E11-55B,127
Infineon Technologies
AUIRF8739L2TR
Analog Devices Inc./Maxim Integrated