TK7P60W,RVQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N CH 600V 7A DPAK
$0.94
Available to order
Reference Price (USD)
2,000+
$0.87360
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TK7P60W,RVQ by Toshiba Semiconductor and Storage is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Toshiba Semiconductor and Storage for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
- FET Feature: Super Junction
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
NXP USA Inc.
BUK7880-55,135
onsemi
FCB20N60TM
STMicroelectronics
STB11N65M5
Infineon Technologies
IRFR120NTRPBF
Vishay Siliconix
SI4455DY-T1-GE3
Nexperia USA Inc.
PHB21N06LT,118
Vishay Siliconix
IRFP140PBF
onsemi
FQP85N06
Toshiba Semiconductor and Storage
TK62J60W,S1VQ
Vishay Siliconix