TK7P65W,RQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 6.8A DPAK
$1.73
Available to order
Reference Price (USD)
2,000+
$0.66780
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the TK7P65W,RQ by Toshiba Semiconductor and Storage, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the TK7P65W,RQ is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IRLR3114ZTRPBF
Diodes Incorporated
DMN2310UT-13
Vishay Siliconix
SI4434DY-T1-GE3
onsemi
NTMFS4C08NT3G
Rohm Semiconductor
RQ5C030TPTL
STMicroelectronics
STN3NF06
Infineon Technologies
IRF200P223
Harris Corporation
IRF353
Vishay Siliconix
IRF820LPBF
Diodes Incorporated